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| MMBF4416LT1 Preferred Device JFET VHF/UHF Amplifier Transistor N-Channel Features http://onsemi.com 2 SOURCE * Pb-Free Package is Available MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Gate Current Symbol VDS VDG VGS IG Value 30 30 30 10 Unit Vdc Vdc Vdc mAdc 3 Symbol PD 225 1.8 RqJA TJ, Tstg 556 -55 to +150 mW mW/C C/W C Max Unit 1 2 SOT-23 (TO-236) CASE 318 STYLE 10 1 DRAIN 3 GATE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board, (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR-5 = 1.0 x 0.75 x 0.062 in. 1 M6A M G G M6A = Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBF4416LT1 MMBF4416LT1G Package SOT-23 Shipping 3,000 / Tape & Reel SOT-23 3,000 / Tape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2006 1 February, 2006 - Rev. 3 Publication Order Number: MMBF4416LT1/D MMBF4416LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = 1.0 mAdc, VDS = 0) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) (VGS = 20 Vdc, VDS = 0, TA = 150C) V(BR)GSS IGSS VGS(off) VGS 30 - - - -1.0 - 1.0 200 -6.0 -5.5 Vdc nAdc Vdc Vdc Symbol Min Max Unit Gate Source Cutoff Voltage (ID = 1.0 nAdc, VDS = 15 Vdc) Gate Source Voltage (ID = 0.5 mAdc, VDS = 15 Vdc) ON CHARACTERISTICS Zero-Gate-Voltage Drain Current (VGS = 15 Vdc, VGS = 0) Gate-Source Forward Voltage (IG = 1.0 mAdc, VDS = 0) SMALL- SIGNAL CHARACTERISTICS Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 10 MHz) Output Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) IDSS VGS(f) 5.0 - 15 1.0 mAdc Vdc mmhos mmhos pF pF pF |Yfs| |yos| Ciss Crss Coss 4500 - - - - 7500 50 4.0 0.8 2.0 COMMON SOURCE CHARACTERISTICS ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25C) grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) 30 20 10 7.0 5.0 3.0 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 0.3 10 20 30 bis @ IDSS 5.0 3.0 2.0 brs @ IDSS 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 grs @ IDSS, 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.25 IDSS gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos) gis @ IDSS bis @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 1. Input Admittance (yis) gfs, FORWARD TRANSCONDUCTANCE (mmhos) |b fs|, FORWARD SUSCEPTANCE (mmhos) 20 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 |bfs| @ IDSS |bfs| @ 0.25 IDSS gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos) 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 10 Figure 2. Reverse Transfer Admittance (yrs) gfs @ IDSS gfs @ 0.25 IDSS bos @ IDSS and 0.25 IDSS gos @ IDSS gos @ 0.25 IDSS 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 3. Forward Transadmittance (yfs) http://onsemi.com 2 Figure 4. Output Admittance (yos) MMBF4416LT1 COMMON SOURCE CHARACTERISTICS S-PARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz) 30 40 20 10 0 1.0 350 100 100 0.9 50 300 0.8 60 70 80 90 100 110 120 0.7 ID = IDSS 500 400 600 500 600 0.6 800 900 700 900 700 800 280 270 260 250 240 80 90 100 110 120 290 70 400 300 200 100 0.0 280 270 260 250 240 300 60 600 800 700 500 0.1 200 340 330 320 40 30 20 10 0 0.4 350 340 330 320 ID = 0.25 IDSS 200 300 400 0.3 310 50 ID = IDSS, 0.25 IDSS 900 0.2 300 290 310 130 230 130 230 140 150 160 170 180 190 200 210 220 140 150 160 170 180 190 200 210 220 Figure 5. S11s 30 40 20 10 0 350 340 330 320 40 30 20 10 Figure 6. S12s 0 350 340 330 100 200 ID = 0.25 IDSS 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8 320 0.6 50 0.5 60 70 80 90 100 110 120 900 800 700 600 500 400 300 ID = IDSS 240 200 100 0.5 230 0.6 130 120 800 700 600 ID = 0.25 IDSS 500 400 300 200 100 0.4 250 110 0.3 900 0.3 280 270 260 80 90 100 0.4 300 290 60 70 310 50 310 300 0.7 290 280 270 260 250 240 0.6 130 230 140 150 160 170 180 190 200 210 220 140 150 160 170 180 190 200 210 220 Figure 7. S21s http://onsemi.com 3 Figure 8. S22s MMBF4416LT1 COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25C) 20 gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 20 30 grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 gig @ IDSS, 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.25 IDSS brg @ IDSS gig @ IDSS grg @ 0.25 IDSS big @ IDSS big @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.007 0.005 Figure 9. Input Admittance (yig) Figure 10. Reverse Transfer Admittance (yrg) gfg , FORWARD TRANSCONDUCTANCE (mmhos) bfg , FORWARD SUSCEPTANCE (mmhos) gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 30 bfg @ IDSS gfg @ IDSS gfg @ 0.25 IDSS 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 bog @ IDSS, 0.25 IDSS gog @ IDSS brg @ 0.25 IDSS gog @ 0.25 IDSS 0.01 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Figure 11. Forward Transfer Admittance (yfg) Figure 12. Output Admittance (yog) http://onsemi.com 4 MMBF4416LT1 COMMON GATE CHARACTERISTICS S-PARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz) 30 40 20 10 0 0.7 100 0.6 50 100 0.5 60 ID = IDSS 70 80 90 100 110 120 0.4 200 300 400 500 600 900 700 0.3 800 900 280 270 260 250 240 80 90 100 ID = IDSS 110 120 700 800 900 130 230 130 900 0.03 230 600 100 500 600 700 800 240 0.02 ID = 0.25 IDSS 0.01 0.0 280 270 260 250 ID = 0.25 IDSS 200 300 400 500 600 700 800 290 70 0.01 290 0.02 300 60 300 310 50 0.03 310 350 340 330 320 40 30 20 10 0 0.04 350 340 330 320 140 150 160 170 180 190 200 210 220 140 150 160 170 0.04 180 190 200 210 220 Figure 13. S11g 30 40 20 10 0 0.5 100 0.4 50 0.3 60 70 80 0.1 90 100 110 120 900 900 260 250 240 100 110 120 0.2 ID = 0.25 IDSS 300 290 280 270 60 70 80 90 ID = IDSS 100 310 50 350 340 330 320 40 30 20 Figure 14. S12g 10 0 1.5 1.0 100 0.9 350 300 200 400 600 800 900 310 340 500 700 330 320 ID = IDSS, 0.25 IDSS 0.8 300 0.7 290 280 270 260 250 240 0.6 130 230 130 230 140 150 160 170 180 190 200 210 220 140 150 160 170 180 190 200 210 220 Figure 15. S21g http://onsemi.com 5 Figure 16. S22g MMBF4416LT1 PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN D 3 SEE VIEW C E 1 2 HE c b e q 0.25 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 A L A1 L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 MMBF4416LT1/D |
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